2023
22. B. Zhang, P. Lu, R. Tabrizian, P. X.-L. Feng, Y. Wu; 2D Magnetic Heterostructures: Spintronics and Quantum Future, arXiv: 2311.03505, 2023,
21. Y. Hou, F. Nichele, H. Chi, A. Lodesani, Y. Wu, M. F. Ritter, D. Z. Haxell, M. Davy-dova, S. Ilic, O. Glezakou-Elbert, A. Varamally, F. Sebastian Bergeret, A. Kamra, L. Fu, P. A. Lee, J. S. Moodera; Ubiquitous Superconducting Diode Effect in Superconductor Thin Films, Physical Review Letters 131, 027001, 2023,
2022
20. Y. Wu*, B. Francisco, Z. Chen, W. Wang, Y. Zhang, C. Wan, X. Han, H. Chi, Y. Hou, A. Lodesani, G. Yin, K. Liu, Y. Cui, K. L. Wang and J. S. Moodera*. A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions, Advanced Materials, 202110583, 2022 (*: Corresponding author),
19. Q. Pan, Y. Liu, H. Wu, P. Zhang, H. Huang, C. Eckberg, X. Che, Y. Wu, B. Dai, Q. Shao, K. L. Wang. Efficient Spin-orbit Torque Switching of Perpendicular Magnetization Using Topological Insulators with High Thermal Tolerance, Advanced Electronic Materials 10, 2200003, 2022,
2021
18. Y. Wu*, W. Wang., L. Pan, and K. L. Wang*. Manipulating Exchange Bias in a van der Waals Ferromagnet, Advanced Materials, 2105266, 2021,
2020
17. Y. Wu, G. Yin, L. Pan, A. J. Grutter, Q. Pan, A. Lee, D. A. Gilbert, J. A. Borchers, W. Ratcliff II, A. Li, X. Han, and K. L. Wang. Large Exchange Splitting in Monolayer Graphene Magnetized by an Antiferromagnet, Nature Electronics 3, 604-611, 2020, In the news, see also UCLA Samueli Newsroom,
16. Y. Wu, S. Zhang, J. Zhang, W. Wang, Y. L. Zhu, J. Hu, G. Yin, K. Wong, C. Fang, C. Wan, X. Han, Q. Shao, T. Taniguchi, K. Watanabe, J. Zang, Z. Mao, X. Zhang, and K. L. Wang. Neel-type Skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure, Nature Communications 11, 3860, 2020,
15. K. L. Wang, Y. Wu, C. Eckberg, G. Yin, and Q. Pan. Topological Quantum Materials, MRS Bulletin, 45(5), 373-379, 2020,
14. C. Yang, L. Pan, L. Pan, A. J. Grutter, H. Wang, X. Che, Q. L. He, Y. Wu, D. A. Gilbert, P. Shafer, E. Arenholz, H. Wu, G. Yin, P. Deng, J. A. Borchers, W. Ratcliff II, and K. L. Wang. Termination Switching of Antiferromagnetic Proximity Effect in Topological Insulator, Science Advances 6(33), eaaz8463, 2020,
13. L. Pan, A. Grutter, P. Zhang, X. Che, T. Nozaki, A. Stern, M. Street, B. Zhang, B. Casas, Q. L. He, E. S. Choi, S. M. Disseler, D. A. Gilbert, G. Yin, Q. Shao, P. Deng, Y. Wu, X. Liu, X. Kou, S. Masashi, X. Han, C. Binek, S. Chambers, J. Xia, and Kang L. Wang. Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure, Advanced Materials, 2001460, 2020,
2019
12. Y. Wu, J. J. He, T. Han, S. Xu, Z. Wu, J. Lin, T. Zhang, Y. He, and N. Wang. Induced Ising Spin-orbit Interaction in Metallic Thin Films on Monolayer WSe2, Physical Review B 99, 121406, 2019,
2018
11. Q. L. He, G. Yin, A. J. Grutter, L. Pan, X. Che, G. Yu, D. A. Gilbert, S. M. Disseler, Y. Liu, P. Shafer, B. Zhang, Y. Wu, B. J. Kirby, E. Arenholz, R. K. Lake, X. Han and Kang L. Wang. Exchange-biasing Topological Charges by Antiferromagnetism. Nature Communications 9, 2767, 2018,
10. T. Han, J. Shen, F. Yuan, J. Lin, Z. Wu, Y. Wu, S. Xu, L. An, G. Long, Y. Wang. R. Lortz, and N. Wang. Investigation of the Two-gap Superconductivity in a Few-Layer NbSe2-graphene Heterojunction, Physical Review B, 97(6), 060505, 2018,
2017
9. S. Xu, J. Shen, G. Long, Z. Wu, Z. Bao, C. Liu, X. Xiao, T. Han, J. Lin, Y. Wu, H. Lu, J. Hou, L. An, Y. Wang, Y. Cai, K. M. Ho, Y. He, R. Lortz, F. Zhang, and N. Wang. Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p-Type Few-Layer WSe2, Physical Review Letters 118, 067702, 2017,
2016
8. Y. Wu, X. Chen, Z. Wu, S. Xu, T. Han, J. Lin, B. Skinner, Y. Cai, Y. He, C. Cheng, and N. Wang. Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures, Physical Review B 93, 035455, 2016,
7. Z. Wu, Y. Guo, Y. Z. Guo, R. Huang, S. G. Xu, J. Song, H. Lu, Z. Lin, Y. Han, H. Li, T. Han, J. Lin, Y. Wu, G. Long, Y. Cai, C. Cheng, D.S. Su, J. Robertsonc and N. Wang. A Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by a Simple Rapid Thermal Treatment, Nanoscale 8, 2594, 2016,
6. Z. Wu, S. Xu, H. Lu, A. Khamoshi, G. Liu, T. Han, Y. Wu, J. Lin, G. Long, Y. He, Y. Cai, Y. Yao, F. Zhang, and N. Wang. Even-odd Layer dependent Magnetotransport of High-mobility Q-valley Electrons in Transition Metal Disulfides, Nature Communications 7, 12955, 2016,
5. S. Xu, Z. Wu, H. Lu, Y. Han, G. Long, X. Chen, T. Han, W. Ye, Y. Wu, J. Lin, J. Shen, Y. Cai, Y. He, F. Zhang, R. Lortz, C. Cheng and N. Wang. Universal Low-temperature Ohmic Contacts for Quantum Transport in Transition Metal Dichalcogenides, 2D Materials 3, 021007, 2016,
2015
4. X. Chen+, Y. Wu+, J. Lin, G. Long, Y. He, Y. Cai, Y. Yao, F. Zhang, and N. Wang. High-quality Sandwiched Black Phosphorus Heterostructure and its Quantum Oscillations, Nature Communications 6, 7351, 2015 (+: equal first author),
3. X. Chen, L. Wang, Y. Wu, H. Gao, Y. Wu, G. Qin, Z. Wu, Y. Han, S. Xu, T. Han, W. Ye, J. Lin, G. Long, Y. He, Y. Cai, W. Ren and N. Wang. Probing the Electronic States and Impurity Effects in Black Phosphorus Vertical Heterostructures , 2D Materials 3, 015012, 2015,
2. S. Xu, Y. Han, X. Chen, Z. Wu, L. Wang, T. Han, W. Ye, H. Lu, G. Long, Y. Wu, J. Lin, Y. Cai, K. M. Ho, Y. He, and N. Wang. Van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-dependent Topological Phase Transition, Nano Letters 15(4), 2645, 2015,
1. Z. Wu, Y. Han, J. Lin, W. Zhu, M. He, S. Xu, X. Chen, H. Lu, W. Ye, T. Han, Y. Wu, G. Long, J. Shen, R. Huang, L. Wang, Y. He, Y. Cai, R. Lortz, D. Su, and N. Wang. Detection of Interlayer Interaction in Few-layer Graphene, Physical Review B 92, 075408, 2015.